0.35µm Embedded Flash Technology
With its 0.35µm embedded Flash technology, ams provides robust embedded non-volatile memory processes for SoC solutions (System on Chip) in automotive, industrial and consumer applications like RFID, Smart Cards, Sensor Interfaces, Micro controller applications, Trimming applications and others.
Key Features embedded Flash
Based on the 0.35µm CMOS process transferred from TSMC (Taiwan Semiconductor Manufacturing Company), the embedded Flash technology offers the following features:
- Very high reliability (data retention >20 years @ 125°C, endurance 100k)
- High temperature capability up to 170°C (suitable for automotive applications)
- Low power consumption
- Full customizable Flash or EEPROM blocks
- EEPROM memory blocks accessible like a static RAM
- Full modularity with 0.35µm CMOS base process C35 enabling reuse of digital library and IP blocks
Key Specifications
0.35µm CMOS embedded EEPROM processes
- C35B3E0: 0.35µm CMOS, 2 poly, 3 metal, PIP
- C35B3E3: 0.35µm CMOS, 2 poly, 3 metal, PIP, 5V MOX, High-Res Poly
- C35B4E3: 0.35µm CMOS, 2 poly, 4 metal, PIP, 5V MOX, High-Res Poly
- C35B4E6: 0.35µm CMOS, 2 poly, 4 metal, PIP, High-Res Poly, MIM caps
0.35µm High-Voltage CMOS embedded EEPROM processes
- H35B3OC: 0.35µm High-Voltage CMOS, 2 poly, 3 metal, PIP, High-Res Poly, 20V HV-Gate
- H35B3F2: 0.35µm High-Voltage CMOS, 2 poly, 3 metal, PIP, 5V MOX, 20V HV-Gate
- H35B4OC: 0.35µm High-Voltage CMOS, 2 poly, 4 metal, PIP, High-Res Poly, 20V HV-Gate
- H35B4H3: 0.35µm High-Voltage CMOS, 2 poly, 4 metal, PIP, High-Res Poly, 5V MOX, Thick top metal, 20V HV-Gate
- H35B4H8: 0.35µm High-Voltage CMOS, 2 poly, 4 metal, PIP, High-Res Poly, 5V MOX, Thick top metal, MIM caps, 20V HV-Gate
Description
ams 0.35µm CMOS and High-Voltage CMOS embedded EEPROM/Flash processes are based on the proven 0.35µm mixed-signal CMOS process. With just a few additional mask levels, ams offers a very competitive, high-performance process technology to its customers.
The very reliable embedded EEPROM/Flash blocks offer low power operation and high data retention over an extended temperature range by using a proven PMOS-based NVM technology. The memory blocks are available as add-on process modules to the 0.35µm CMOS and High-Voltage CMOS processes and can also be configured as EEPROM blocks or Flash memories without any process changes.
Available EEPROM/Flash Blocks in 0.35µm CMOS process
| Process | Block Size | Organization | Read Supply | Write Supply | Endurance | Data Retention | Size |
| C35 (mid-ox only) | 1x8 bit | EEPROM | 2.7 – 5.5V | 2.7 – 5.5V | 100k @ 125°C | >20 years @ 125°C | 0.22mm² |
| C35 | 256x16 bit | EEPROM | 1.8 – 3.6 V | 1.8V - 3.6V | 100k @ 125°C | >20 years @ 125°C | 0.57mm² |
| C35 | 384x8 bit | EEPROM | 2.5 – 3.6 V | 2.5 – 3.6 V | 100k @ 125°C | >20 years @ 125°C | 0.73mm² |
| C35 | 1152x8 bit | EEPROM | 1.6 – 3.6 V | 1.6 – 3.6 V | 100k @ 125°C | >20 years @ 125°C | 0.79mm² |
| C35 | 4Kx16 bit | EEPROM | 2.7 – 3.6 V | 2.7 – 3.6 V | 100k @ 125°C | >20 years @ 125°C | 1.23mm² |
| C35 | 32Kx8 bit | Flash | 2.7 – 3.6 V | 2.7 – 3.6 V | 100k @ 125°C | >20 years @ 125°C | 2.85mm² |
| C35 | 12K5x32 bit | EEPROM | 1.8 – 3.6 V | 1.8 – 3.6 V | 100k @ 125°C | >20 years @ 125°C | 4.44mm² |
Available EEPROM/Flash Blocks in 0.35µm High-Voltage CMOS process
| Process | Block Size | Organization | Read Supply | Write Supply | Endurance | Data Retention | Size |
| H35 | 64x8 bit | EEPROM | 1.8 – 3,6V | 1.8 – 3,6 V | 80k @ 125°C | >20 years @ 125°C | 0.36mm² |
| H35 (mid-ox only) | 128x8 bit | EEPROM | 2.3 – 5.5V | 2.3 – 5.5 V | 80k @ 125°C | >20 years @ 125°C | 0.54mm² |
| H35 | 1Kx8 bit | EEPROM | 2.7 – 3.6 V | 2.7 – 3.6 V | 80k @ 125°C | >20 years @ 125°C | 0.73mm² |
| H35, high-temp | 1Kx8 bit | EEPROM | 2.7 – 3.6 V | 2.7 – 3.6 V | 40k @ 150°C | 10 years @ 150°C | 0.94mm² |
| H35, high-temp | 2Kx8 bit | EEPROM | 1.8 – 3.6V | 1.8 – 3.6V | 40k @ 150°C | 10 years @ 150°C | 1.20mm² |
| H35 | 4Kx16 bit | EEPROM | 2.7 – 3.6 V | 2.7 – 3.6 V | 80k @ 125°C | >20 years @ 125°C | 1.55mm² |
Reference design flow
- Start design on C35 base process
- Order custom specific flash block via sales department (IP block is subject to license fee and needs to be explicitly ordered)
- Black box delivery: Receives an abstract and a Verilog simulation model of the memory
- Mandatory 3 days design review with specialized ams + design engineers
- Tape out: Fully verified design will be submitted to Full Service Foundry for manufacturing
- Implementation of complete flash block layout & transfer to production
- Wafer production at ams 8 inch fab
- You will receive wafers with fully tested Flash/EEPROM blocks, wafer sort optionally available
Process Design Kits (HIT-Kit)
| CADENCE Design Framework II | MENTOR IC Flow |
| Device Library (pcells) | Device Library (pcells) |
| Circuit Simulation Models | Circuit Simulation Models |
| CMOS Core and Peripheral Cell Libraries | CMOS Core and Peripheral Cell Libraries |
| Accurate Package Models | Accurate Package Models |
| RFDE and Dynamic Link to Agilent ADS |
Highly accurate circuit simulation parameters for the simulators Eldo, EldoS, Hspice, Pspice, Saber, Smash, SpectreS, SpectreDirect, SmartSpice and ADSsim may be downloaded from our technical web server.
For detailed information please refer to http://asic.ams.com/hitkit/