Technologies for Automotive ASICs

• 0.35 μm High-Voltage CMOS process with up to 120V
• Available ESD: 6kV IEC61000-4-2, 4kV HBM MIL883
• NVM: High temperature EEPROM module (Tj 170C), polysilicon fuse OTP
• 0.35 μm SiGe-BiCMOS process for automotive RF applications (ft 70GHz)
• 0.18 μm CMOS high-voltage: process freeze in Q4/2009, production ramp up in Q1/2010
• SSOP, TSSOP, QFN Packages qualified for 150C ambient and 175C storage temperature
• Dual die QFN package for 150C ambient temperature available

Proven IP

• ams established a broad portfolio of automotive ASIC IP
• We offer a proven track record with many sensor interface, safety and powermanagement ASICs

Click here for Automotive ASICs Design Examples

Quality in Manufacturing

• All our technologies are produced on low-defect 200mm wafer base material
• We provide safe-launch for all automotive products: 100% burn-In and tri-temperature test for first minimum 100k parts
• We offer process corner lot for any automotive product to verify high yield manufacturability
• We provide early qualification of ASICs during development

ams is certified to a wide range of automotive quality and environment standards.