Applications

• µController applications
• Trimming of analog circuits

Key Features

• Static RAM with integrated Poly Fuse cell for permanent data storage.
• Internal current source for programming of fuse.
• No additional supply for programming of fuse.
• Organization 16 x 8 bit & 4 x 8 bit.
• Data width 8 bits.
• Memory depth 16 or 4 byte.
• additional 32 bit parallel data out
• µController interface

Key Specification

• Area : 0.11mm² for 32bit & 0.17mm² for 128 bit block.
• Wide Temperature range (junction temp.) –40 to +150 & wide supply range 1.8V – 3.6V degC for all operations except fusing.
• Standby current: fully static operation
• Read access time < 30 ns
• fuse time < 20 us per bit
• fuse current < 100mA

Description

The device represents a memory device consisting of a combination of a static RAM and a permanent storage of data in Poly Fuse cells.

During operation the data are stored in a static RAM cell. Read/Write operations are performed on the block as for a static RAM block.

Permanent data storage (non-volatile data storage) can be done in Poly Fuse cells, which is a one time programming storage cell. There are extra operating modes available to store the data permanently in the Poly Fuse cell (fusing operation mode) and the transfer data from the Poly Fuse cell into the static RAM cell (load operating mode).

All required blocks to handle these additional operation modes like current sources, state machines, comparators are integrated in the IP block. No additional power supply for fuse operation is required.

A 32 bit parallel databus gives direct access to data stored in the first 32 bits of the RAM cell.